multi-chip transistor (npn) features power dissipation p cm : 300 mw (tamb=25 ) collector current i cm : 200 ma collector-base voltage v (br)cbo : 50 v operating and storage j unction temperature range t j, t stg : -55 to +150 marking: 1c electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 10 a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo ic= 10 ma,i b =0 45 v emitter-base breakdown voltage v (br)ebo i e = 10 a,i c =0 6 v collector cut-off current i cbo v cb = 30 v,i e =0 15 na dc current gain h fe(1) v ce = 5 v,i c = 2 ma 110 630 v ce(sat)(1) i c = 10 ma,i b = 0.5 ma 0.25 v collector-emitter saturation voltage v ce(sat)(2) i c = 100 ma,i b =5ma 0.65 v v be(1) v ce = 5 v,i c = 2 ma 0.58 0.7 v base-emitter voltage v be(2) v ce = 5 v,i c = 10 ma 0.77 v transition frequency f t v ce = 5 v,i c = 20 ma ,f= 100 mhz 200 mhz collector output capacitance c ob v cb = 10 v,i e =0,f= 1 mhz 2 pf sot-363 BC847S http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. ,ltd rohs wej electronic co.,ltd
typical characteristics BC847S http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. ,ltd rohs wej electronic co.,ltd
BC847S http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. ,ltd rohs wej electronic co.,ltd
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